march 2012 FDD390N15ALZ n-ch annel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDD390N15ALZ rev.c1 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter rating units v dss drain to source voltage 150 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 26 a - continuous (t c = 100 o c) 17 i dm drain current - pulsed (note 1) 104 a e as single pulsed avalanche energy (note 2) 96 mj dv/dt peak diode recovery dv/dt (note 3) 13 v/ns p d power dissipation (t c = 25 o c) 63 w - derate above 25 o c0.5w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter min. max. units r jc thermal resistance, junction to case - 2.0 o c/w r ja thermal resistance, junction to ambient - 87 FDD390N15ALZ n-channel powertrench ? mosfet 150v, 26a, 42m features ?r ds(on) = 33.4m ( typ.) @ v gs = 10v, i d = 26a ?r ds(on) = 42.2m ( typ.) @ v gs = 4.5v, i d = 20a ? fast switching speed ? low gate charge ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advanced powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for telecommunication psu ? battery charger ? ac motor drives and uninterruptible power supplies d-pak g s d g s d g s d
FDD390N15ALZ n-ch annel powertrench ? mosfet FDD390N15ALZ rev.c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDD390N15ALZ FDD390N15ALZ d-pak 380mm 16mm 2500 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 150 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.15 - v/ o c i dss zero gate voltage drain current v ds = 120v, v gs = 0v - - 1 a v ds = 120v, t c = 125 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a1.4-2.8v r ds(on) static drain to source on resistance v gs = 10v, i d = 26a - 33.4 42 m v gs = 4.5v, i d = 20a - 42.2 64 m g fs forward transconductance v ds = 10v, i d = 26a -50-s c iss input capacitance v ds = 75v, v gs = 0v f = 1mhz - 1323 1760 pf c oss output capacitance - 93 120 pf c rss reverse transfer capacitance - 4 6 pf c oss(er) energy related output capacitance v ds = 75v, v gs = 0v - 165 - pf q g(tot) total gate charge at 10v v gs = 10v v ds = 75v i d = 26a (note 4) - 17.6 39 nc q g(tot) total gate charge at 5v v gs = 4.5v - 8.1 10.5 nc q gs gate to source gate charge -4.7-nc q gd gate to drain ?miller? charge - 2.3 - nc esr equivalent series resistance (g-s) drain shorted to source, f = 1mhz - 1.48 - t d(on) turn-on delay time v dd = 75v, i d = 26a v gs = 10v, r gen = 4.7 (note 4) -12.835.6ns t r turn-on rise time - 9.3 28.6 ns t d(off) turn-off delay time - 26.9 63.8 ns t f turn-off fall time - 3.2 16.4 ns i s maximum continuous drain to source diode forward current - - 26 a i sm maximum pulsed drain to source diode forward current - - 104 a v sd drain to source diode forward voltage v gs = 0v, i sd = 26a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 26a di f /dt = 100a/ s -70-ns q rr reverse recovery charge - 169 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 3mh, i as = 6.75a, starting t j = 25 c 3. i sd 26a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDD390N15ALZ n-ch annel powertrench ? mosfet FDD390N15ALZ rev.c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.05 0.1 1 10 100 1000 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain cu rrent[a] v ds , drain-source voltage[v] v gs = 10.0v 5.5v 5.0v 4.5v 4.0v 3.5v 3.0v 123456 1 10 100 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain cu rrent[a] v gs , gate-source voltage[v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 20406080100 20 40 60 80 100 *note: t c = 25 o c v gs = 10v v gs = 4.5v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 100 200 2 10 100 1000 2000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12 16 20 0 2 4 6 8 10 *note: i d = 26a v ds = 30v v ds = 75v v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDD390N15ALZ n-ch annel powertrench ? mosfet FDD390N15ALZ rev.c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -80 -40 0 40 80 120 160 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -80 -40 0 40 80 120 160 0.4 0.8 1.2 1.6 2.0 2.4 2.6 *notes: 1. v gs = 10v 2. i d = 26a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 1 10 100 200 0.01 0.1 1 10 100 200 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 150 o c r jc = 2.0 o c/w dc 25 50 75 100 125 150 0 5 10 15 20 25 30 v gs = 4.5v r jc = 2.0 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c ] 0 306090120150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e oss , [ j] v ds , drain to source voltage [v] 0.01 0.1 1 10 100 1 10 15 t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a)
FDD390N15ALZ n-ch annel powertrench ? mosfet FDD390N15ALZ rev.c1 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 0.01 0.1 1 3 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 2.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDD390N15ALZ n-ch annel powertrench ? mosfet FDD390N15ALZ rev.c1 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms g s d g s d
FDD390N15ALZ n-ch annel powertrench ? mosfet FDD390N15ALZ rev.c1 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDD390N15ALZ n-ch annel powertrench ? mosfet FDD390N15ALZ rev.c1 www.fairchildsemi.com 8 mechanical dimensions d-pak dimensions in millimeters
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